PART |
Description |
Maker |
MJD243T4 MJD243-1 MJD243 ON1999 |
From old datasheet system SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTOR 4 AMPERES 100 VOLTS 12.5 WATTS
|
MOTOROLA[Motorola, Inc] ON Semi MOTOROLA[Motorola Inc]
|
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
MJE18004 MJF18004 ON2021 |
POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB From old datasheet system Switching Power Supply Applications
|
Motorola Mobility Holdings, Inc. ON Semiconductor MOTOROLA[Motorola, Inc]
|
CM100DU-24F CM100DU-24H |
Trench Gate Design Dual IGBTMOD?/a> 100 Amperes/1200 Volts HIGH POWER SWITCHING USE INSULATED TYPE Trench Gate Design Dual IGBTMOD⑩ 100 Amperes/1200 Volts Trench Gate Design Dual IGBTMOD 100 Amperes/1200 Volts
|
Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|
KS221K10 |
Single Darlington Transistor Module (100 Amperes/1000 Volts)
|
Powerex Power Semiconductors
|
MJD127-1 MJD122-1 |
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT
|
Motorola, Inc
|
MTP71040L_D ON2639 |
TMOS POWER FET 60 AMPERES 100 VOLTS From old datasheet system
|
ON Semi
|
MTP60N10E7 ON2634 |
TMOS POWER FET 60 AMPERES 100 VOLTS From old datasheet system
|
ON Semi
|
MTD6N10 |
TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS
|
Motorola
|
IPP100N04S2-04 IPB100N04S2-04 SP0002-19061 SP0002- |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS? Power-Transistor OptiMOS㈢ Power-Transistor 100 A, 40 V, 0.0036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB GREEN, PLASTIC, TO-220, 3 PIN
|
Infineon Technologies AG
|
MTP10N10E ON2538 |
From old datasheet system TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM
|
MOTOROLA[Motorola, Inc]
|